Description
Material :Silicon
Crystal Structure :Diamond
Purity:>99.9999%
Growth method:CZ FZ
Type:P or N
Purity:6N-9N
Orientation:<100>or<111>
Resistivity:0.001-10000 Ω.cm
Hardness, Mohs 7
Density:2.33g/cm3
QUEST PHOTONIC DEVICES B.V
Material :Silicon
Crystal Structure :Diamond
Purity:>99.9999%
Growth method:CZ FZ
Type:P or N
Purity:6N-9N
Orientation:<100>or<111>
Resistivity:0.001-10000 Ω.cm
Hardness, Mohs 7
Density:2.33g/cm3
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